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• W2008389740 abstract "Single-crystalline Ti1−xNbxO2 (x = 0.2) films of 40 nm thickness were deposited on SrTiO3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti1−xNbxO2 films with x ≥ 0.03 is 2–3 × 10− 4 Ω cm at room temperature. The carrier density of Ti1−xNbxO2, which is almost proportional to the Nb concentration, can be controlled in a range of 1 × 1019 to 2 × 1021 cm− 3. Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x = 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti1−xNbxO2 is one of the promising candidates for the practical TCOs." @default.
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• W2008389740 date "2006-02-01" @default.
• W2008389740 modified "2023-10-18" @default.
• W2008389740 title "Novel transparent conducting oxide: Anatase Ti1−xNbxO2" @default.
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• W2008389740 doi "https://doi.org/10.1016/j.tsf.2005.08.245" @default.
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