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• W2008421910 abstract "Using a thermally cross-linkable organosiloxane-based organic-inorganic hybrid material, a solution-processable gate dielectric layer for organic thin-film transistors has been fabricated. The hybrid dielectric was synthesized by a sol-gel process, followed by heat treatment at below 190°C. Dielectric strength of 1.4–1.65MV∕cm was measured and it was confirmed that the leakage current is governed by the Poole-Frenkel emission mechanism in which the silanol groups act as trap sites. An organic thin-film transistor utilizing the hybrid dielectric shows similar electrical performance to a transistor fabricated using surface-modified thermally grown SiO2." @default.
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• W2008421910 date "2006-08-28" @default.
• W2008421910 modified "2023-09-26" @default.
• W2008421910 title "Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors" @default.
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• W2008421910 doi "https://doi.org/10.1063/1.2338753" @default.
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