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- W2008429167 abstract "We carried out hydrogen injection in amorphous InGaZnO (a-IGZO) by hot isostatic pressing (HIP) treatment under different pressures ranging from 10 to 1000 bar and investigated the stable site of hydrogen in a-IGZO. The HIP process efficiently injected hydrogen in the whole sample without the formation of indium clusters. Despite oxygen annealing, hydrogenated a-IGZO maintained a high electrical conductivity (n∼1019 cm−3 and μ∼16 cm2/V s) without any noticeable physical degradation. In this paper, we discuss the dependence of the preferential position of hydrogen in a-IGZO on the magnitude of pressure and its contribution on the electrical characteristics." @default.
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- W2008429167 date "2011-03-21" @default.
- W2008429167 modified "2023-09-27" @default.
- W2008429167 title "Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing" @default.
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- W2008429167 doi "https://doi.org/10.1063/1.3567635" @default.
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