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- W2008473639 abstract "In this paper, the drain voltage dependence of the low-frequency (lf) noise of partially depleted silicon-on-insulator n-metal-oxide-semiconductor-transistors (n-MOSTs) is investigated in detail at liquid helium temperature. As will be shown, an increase in the noise spectral density is observed at the kink position, similar to bulk n-MOSTs operated at 4.2 K. This excess noise introduces a Lorentzian generation-recombination (GR) component in the lf noise spectrum. The physical mechanism underlying the GR noise is thought to be the same as for bulk transistors: ionization and capture in the depletion region of carriers, which are created at the drain. This generates a fluctuation in the depletion charge, which is translated into a fluctuation of the drain current via a change in the threshold voltage. A model will be proposed that is derived from the analysis previously established for the bulk case. Extension of the model to fully depleted, thin-film transistors and to higher temperatures (77 K, 300 K) will be briefly outlined. As will be demonstrated, a good overall agreement between theory and experiment is obtained whereby the key features of the noise overshoot, i.e., its position and amplitude, are consistently reproduced." @default.
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- W2008473639 date "1992-08-15" @default.
- W2008473639 modified "2023-09-30" @default.
- W2008473639 title "A study of the kink‐related excess low‐frequency noise in silicon‐ on‐insulator<i>n</i>‐metal‐oxide‐semiconductor transistors operated at liquid helium temperatures" @default.
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- W2008473639 doi "https://doi.org/10.1063/1.351701" @default.
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