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- W2008494552 abstract "The 2D-to-3D transition process of strained In(Ga)As layers epitaxied on InP(001) was studied by scanning tunneling microscopy at compressive mismatches of 2 and 3.2%. During growth, the surface morphology exhibits characteristic evolutions. First, multisteps are formed at 2D platelet edges, then a transition with noticeable matter transport arises, giving 3D wire-like structures. The transition occurs between four and five deposited monolayers at 2% mismatch and between two and three monolayers at 3.2% mismatch. Matter redistribution from highly stressed lower terraces to the relaxed top edges of platelets appears to be an energetically favorable process which can explain the formation of 3D wire-like structures." @default.
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- W2008494552 date "1998-05-01" @default.
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- W2008494552 title "Strain effect on the growth of 3D In(Ga)As wire structures on InP(001)" @default.
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- W2008494552 doi "https://doi.org/10.1016/s0039-6028(97)00984-9" @default.
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