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- W2008503568 abstract "Hole generation by photons and high electric fields is investigated experimentally in quenched selenium. An essentially different dependence of generation on the applied electric field and temperature is found for the holes generated in the bulk and in the several micron thick high-resistivity surface layer of selenium. The surface layer is always present if selenium damage by air and short wavelength light is not avoided. The following regularities are determined: high electric fields generate holes only in the surface layer; the efficiency of photogeneration in the surface layer depends on field and temperature; no field and temperature activation is required for the uniform bulk photogeneration observed. Es wurde experimentell die Löchererzeugung durch Lichtquanten und durch hohe elektrische Felder in abgeschrecktem Selen untersucht. Die Abhängigkeit der Löchererzeugung vom Feld und von der Temperatur ist unterschiedlich im Volumen und in der hochohmigen Oberflächenschicht, deren Dicke einige Mikrometer beträgt. Diese Oberflächenschicht entsteht unter der Einwirkung von Luft und kurzwelliger Bestrahlung. Es wird gefunden, daß das hohe elektrische Feld nur Löcher in der Oberflächenschicht erzeugen kann, die Quantenausbeute der optischen Anregung in der Oberflächenschicht von der Feldstärke und Temperatur abhängt und eine vom Feld und der Temperatur unabhängige infrarote optische Anregung im Volumen des amorphen Selens auftritt." @default.
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- W2008503568 date "1971-03-16" @default.
- W2008503568 modified "2023-09-25" @default.
- W2008503568 title "Hole generation in amorphous selenium" @default.
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- W2008503568 doi "https://doi.org/10.1002/pssa.2210040324" @default.
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