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- W2008510059 abstract "The critical-dimension (CD) performance and the printability of 1x stencil masks used for low-energy electron-beam proximity-projection lithography (LEEPL) have been studied by using the LEEPL β-tool. The CD uniformity and the line edge roughness on the mask are 6.0 nm and 3.5 nm in 3σ, respectively. It has been found that the fidelity of the etching process is so high that the optimization of the electron-beam writing process is critical to perforate high-quality patterns. The mask error enhancement factor evaluated over 80-100 nm lies is nearly unity, demonstrating the excellent fidelity of image transfer from the mask to a wafer. The critical defect sizes are 14.5 and 22.8 nm for the protrusions on the edges of 100-nm lines and the 150-nm contact holes respectively, implying that defect inspection is a challenge. The current achievements and the final targets in the 65-nm node are compared to assess the gap that must be bridged." @default.
- W2008510059 created "2016-06-24" @default.
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- W2008510059 date "2003-08-26" @default.
- W2008510059 modified "2023-09-23" @default.
- W2008510059 title "State-of-the-art performance of stencil mask for LEEPL" @default.
- W2008510059 doi "https://doi.org/10.1117/12.504273" @default.
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