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• W2008593060 abstract "High-performance thin-film transistors (TFTs) using atomic layer deposited (ALD) Al2O3 as gate insulator and radio frequency (RF) sputtering In–Ga–Zn Oxide (IGZO) as channel layer were fabricated in this work. A SiO2 buffer layer was applied between IGZO and Al2O3 to prevent the picked-up defects when the samples were switched from ALD to RF sputtering. Contrasting to the TFTs without buffer layer, the SiO2 buffer layer improved the TFTs performances greatly, such as: the field effect mobility increases from 5.2 cm2/V s to 6.1 cm2/V s, the threshold voltage downshifts from 4.9 V to 1.7 V, the Ion/Ioff ratio increases from 2.8 × 107 to 9.6 × 107, the sub-threshold swing decreased from 0.76 V/dec to 0.6 V/dec. The maximum density of surface states at the channel–insulator interface decreased from 2.1 × 1012 cm−2 to 1.53 × 1012 cm−2." @default.
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• W2008593060 date "2014-05-01" @default.
• W2008593060 modified "2023-10-18" @default.
• W2008593060 title "The Al2O3 gate insulator modified by SiO2 film to improve the performance of IGZO TFTs" @default.
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• W2008593060 doi "https://doi.org/10.1016/j.spmi.2014.02.001" @default.
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