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• W2008609872 abstract "We investigate the long-term degradation of 2.3-μm wavelength InAs/InP highly strained multiquantum-well distributed-feedback lasers with a p- and n-type InP buried heterostructure during constant power aging. Stable operation beyond 20 000 h is confirmed at an ambient temperature of 45 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>°</sup> C and with a constant output power of 3 mW, and we successfully fabricate a practical optical source for trace gas monitoring applications. A conventional diffusion process dominates the main degradation mechanism as found with conventional telecommunication lasers. Furthermore, we show that some defects are located in the regrown p-type InP layer above the active layer and that downward diffused defects degrade the guide, upper separate confinement heterostructure (SCH), and active layers." @default.
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• W2008609872 date "2012-04-01" @default.
• W2008609872 modified "2023-10-14" @default.
• W2008609872 title "Long-Term Degradation Behavior of 2.3-$muhbox{m}$ Wavelength Highly Strained InAs/InP MQW-DFB Lasers With a p-/n-InP Buried Heterostructure" @default.
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• W2008609872 doi "https://doi.org/10.1109/ted.2011.2181176" @default.
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