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- W2008669968 abstract "Doping by annealing of ZnSe single crystals grown by solid phase recrystallisation in a mixture of Al and Zn at 860°C has been studied. The properties of doped ZnSe crystals assessed by secondary ions mass spectroscopy, scanning electron microscopy (electron channelling patterns (ECP) and cathodoluminescence (CL)), double crystal X-ray diffraction (rocking curve) and Hall effect measurements depend strongly on the geometry of the crystal which is annealed. In the best case, CL spectra show only the donor-bound exciton line (2.67 eV at 300 K; 2.77 eV at 100 K) indicating thus, together with ECP and rocking curve FWHM (35 arcsec), the high crystalline quality of the (100)-doped substrates. From Hall effect measurements, a free electron concentration of 5 × 10 17 cm -3 and an electron mobility of 200 cm -2 V -1 s -1 (resistivity 6.3 × 10 -2 Ω cm) at 300 K are determined." @default.
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- W2008669968 date "1999-02-01" @default.
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- W2008669968 title "Low resistive ZnSe substrates" @default.
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- W2008669968 doi "https://doi.org/10.1016/s0022-0248(98)00744-1" @default.
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