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• W2008677251 abstract "Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17 nm x 17 nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100,000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices." @default.
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• W2008677251 date "2009-11-30" @default.
• W2008677251 modified "2023-09-23" @default.
• W2008677251 title "The fabrication of Ni quantum cross devices with a 17 nm junction and their current–voltage characteristics" @default.
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• W2008677251 doi "https://doi.org/10.1088/0957-4484/21/1/015301" @default.
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