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• W2008696001 abstract "Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n + -polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage ( V t ) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal–oxide–nitride–oxide–silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si–oxide–nitride–oxide–silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n + -poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial V t roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length ( L g ) is scaled down to 46 nm or less." @default.
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• W2008696001 date "2014-03-27" @default.
• W2008696001 modified "2023-10-18" @default.
• W2008696001 title "Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates" @default.
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• W2008696001 doi "https://doi.org/10.7567/jjap.53.04ed16" @default.
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