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- W2008711661 abstract "The ZnSe, a wide band gap semiconductor has high potential for application in optoelctronic applications. The structural parameters of a thin film semiconductor largely depend on the preparation method and conditions. Transparent ZnSe thin films of thickness 200-450nm have been prepared by thermal evaporation method on chemically cleaned glass substrates at different substrate temperatures from room temperature to 523K. The film structure was studied by x-ray diffraction technique and different micro structural parameters were determined from it. The XRD spectra showed that the ZnSe films prepared at higher substrate temperature are polycrystalline in nature and have a cubic (zinc-blende) structure. The average grain size of the polycrystalline ZnSe films calculated from XRD line spectra using Scherrer's formula was found to increase from 13nm to 33nm with increase of substrate temperature from 373K to 523K. The internal strain and dislocation density of these films were found to decrease with increase of substrate temperature and also with thickness." @default.
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- W2008711661 date "2008-05-01" @default.
- W2008711661 modified "2023-09-27" @default.
- W2008711661 title "Effect of substrate temperature on structural properties of thermally evaporated ZnSe thin films of different thickness" @default.
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- W2008711661 doi "https://doi.org/10.1088/1742-6596/114/1/012048" @default.
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