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- W2008747003 abstract "We demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity gettering and hydrogen passivation, respectively, which is shown by means of deep-level transient spectroscopy. Time-resolved EL measurements reveal a response time below 1.8 μs, which is much faster, compared to the band-to-band luminescence of bulk silicon." @default.
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- W2008747003 date "2004-03-22" @default.
- W2008747003 modified "2023-10-03" @default.
- W2008747003 title "Room-temperature silicon light-emitting diodes based on dislocation luminescence" @default.
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- W2008747003 doi "https://doi.org/10.1063/1.1689402" @default.
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