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- W2008756087 abstract "Abstract A novel infrared absorption method has been developed to measure the interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10–30 μm are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm−1 absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 1017 cm−3." @default.
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- W2008756087 date "1999-07-01" @default.
- W2008756087 modified "2023-09-27" @default.
- W2008756087 title "Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers" @default.
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- W2008756087 doi "https://doi.org/10.1016/s0167-9317(99)00180-x" @default.
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