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• W2008839200 abstract "The fundamental surface chemistry underlying selectivity in copper chemical vapor deposition (CVD) from COD-Cu-hfac and Cu(hfac)2 has been determined. Both electronic and chemistry contributions strongly influence the precursor reactivity on oxide as compared to metal surfaces. These results have important implications regarding the role of surface preparation and cleaning for initiating and maintaining selective deposition." @default.
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• W2008839200 date "1992-03-30" @default.
• W2008839200 modified "2023-09-23" @default.
• W2008839200 title "Selectivity in copper chemical vapor deposition" @default.
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• W2008839200 doi "https://doi.org/10.1063/1.107259" @default.
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