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- W2008845749 abstract "Films of γ-In2Se3 are easily obtained by the evaporation of indium and selenium with the supply ratio R = [Se]/[In] above 1.7 and the substrate temperature Ts above 170°C. InSe films are obtained when R ≈ 1.2 and Ts > 100°C. The electrical conductivities of γ-In2Se3 and InSe films are about 10−10−10−7 and 10−6 S cm−1 respectively. The band gap of γ-In2Se3 is estimated to be about 2 eV in this study. The mechanism of film formation is also discussed." @default.
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- W2008845749 date "1987-01-01" @default.
- W2008845749 modified "2023-10-14" @default.
- W2008845749 title "Indium selenide film formation by the double-source evaporation of indium and selenium" @default.
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- W2008845749 doi "https://doi.org/10.1016/0040-6090(87)90340-3" @default.
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