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- W2008904035 abstract "The compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers grown by metal-organic chemical vapour deposition on GaAs(1 0 0) substrates was studied by photoreflectance (PR) spectroscopy. Investigation of the compositional dependence at 20 K showed a slight increase in the energy gap with the increase in the [Cu]/[In] fraction. Line-shape analysis of PR spectra indicated that near stoichiometric and slightly Cu-rich CuInSe2 layers have a better crystallinity than In-rich ones. Investigation of the temperature dependence for both Cu-rich and In-rich modifications, in the range 300–20 K, demonstrated a red-shift of band-gap energies with the decrease in temperature below 70 K and provided experimental evidence of the anomalous temperature dependence of the energy gap in this material. Moreover, a combination of modulation power-dependent PR and photoluminescence studies at 20 K revealed that the optical emission interfering in the PR spectra at energies below the band-gap energy originates from donor–acceptor pair recombination and diminishes at low modulation powers." @default.
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- W2008904035 date "2008-07-21" @default.
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- W2008904035 title "Compositional and temperature dependence of the energy band gap of Cu<sub><i>x</i></sub>In<sub><i>y</i></sub>Se<sub>2</sub>epitaxial layers" @default.
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- W2008904035 doi "https://doi.org/10.1088/0022-3727/41/16/165102" @default.
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