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- W2008927761 abstract "Atomic force microscopy (AFM) has been used to fabricate and electrically characterize SiO2 films as gate dielectrics of metal–oxide–semiconductor (MOS) electronic devices. The electrical properties of the AFM grown oxide (3 nm thick) have been determined at a nanometric scale and compared to those of thermal gate oxides (GOXs). The results show a similar electrical behaviour of both kinds of oxide. Furthermore, the broken down GOX locations (breakdown spots) induced in microelectronic-sized devices have been located and electrically characterized with AFM. The results indicate that AFM is a suitable tool for the fabrication and reliability analysis of present and future Si/SiO2 based MOS nanoelectronic devices." @default.
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- W2008927761 date "2003-04-14" @default.
- W2008927761 modified "2023-10-16" @default.
- W2008927761 title "Electrical characterization and fabrication of SiO2based metal oxide semiconductor nanoelectronic devices with atomic force microscopy" @default.
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- W2008927761 doi "https://doi.org/10.1088/0957-4484/14/6/303" @default.
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