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• W2009011631 abstract "The surface morphology of Si(111) was investigated using scanning tunneling microscopy after desorption of surface SiO2 by synchrotron radiation (SR) illumination. The surface shows large regions of atomically flat Si(111)-7×7 structure, and is characterized by the formation of single bilayer steps nicely registered to the underlying crystal structure. This is in sharp contrast to Si(111) surfaces after thermal desorption of SiO2 at temperatures 880 °C and above, where the surface steps are much more irregular. The registration of the surface steps to the underlying crystal structure indicates that the Si(111) surface reaches thermodynamic equilibrium under SR irradiation at temperatures much lower than that necessary for thermal desorption." @default.
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• W2009011631 date "2000-03-13" @default.
• W2009011631 modified "2023-10-12" @default.
• W2009011631 title "Scanning tunneling microscopy study of Si(111) surface morphology after removal of SiO2 by synchrotron radiation illumination" @default.
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• W2009011631 doi "https://doi.org/10.1063/1.126042" @default.
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