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• W2009091966 endingPage "085003" @default.
• W2009091966 startingPage "085003" @default.
• W2009091966 abstract "The electrical characteristics of ion-implanted guard rings for molybdenum (Mo) Schottky diodes on 4H-SiC are analyzed on the basis of the standard thermionic emission model and the assumption of a Gaussian distribution of the barrier height. For edge termination, high-resistivity guard rings manufactured by carbon and aluminum ion-implanted areas were used. Extractions of barrier heights of molybdenum on silicon carbide (4H-SiC) Schottky diodes have been performed on structures with various gate metallization, using both current–voltage–temperature (I–V–T) and capacitance–voltage (C–V) measurements. Characteristic features of the Schottky barrier height (SBH) are considered in relation to the specific dose of the carbon- or aluminum-implanted guard ring. Contacts showed excellent Schottky behavior ideality factors between 1.02 and 1.24 in the range of 303–473 K. The measured SBHs were between 0.92 and 1.17 eV in the same temperature range from I–V–T characteristics. The variations in the barrier height, which is significantly temperature- and implantation-dose-dependent, are well fitted to a single Gaussian distribution function. Experimental results agree reasonably well by using this approach, particularly for carbon implantation dose of 1.75 × 1014 cm−2, and a mean barrier height () of 1.22 eV and zero bias standard deviation σ0 = 0.067 V have been obtained. Furthermore, the modified Richardson plot according to the Gaussian distribution model resulted in a mean barrier height () and a Richardson constant (A*) of 1.22 eV and 148 A cm−2 K−2, respectively. The A* value obtained from this plot is in very close agreement with the theoretical value of 146 A cm−2 K−2 for n-type 4H-SiC. Therefore, it has been concluded that the temperature dependence of the forward (I–V) characteristics of the Mo/4H-SiC contacts can be successfully explained on the basis of a thermionic emission conduction mechanism with Guassianly distributed barriers." @default.
• W2009091966 created "2016-06-24" @default.
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• W2009091966 date "2011-04-26" @default.
• W2009091966 modified "2023-10-05" @default.
• W2009091966 title "Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence" @default.
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• W2009091966 doi "https://doi.org/10.1088/0268-1242/26/8/085003" @default.
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