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• W2009104062 abstract "Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 10 16 −10 17 ions/cm 2 . Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As." @default.
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• W2009104062 date "1991-07-01" @default.
• W2009104062 modified "2023-10-01" @default.
• W2009104062 title "Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation" @default.
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• W2009104062 doi "https://doi.org/10.1016/0168-583x(91)95802-k" @default.
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