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• W2009127404 abstract "The deep-level transient current spectroscopy (DLTCS) is applied to study electronic phenomena at GaAs–anodic oxide interfaces. It is found that large-signal excitation pulses lead to a transient response, which analysis may lead to erroneous results as a consequence of the nonlinearity of the system. DLTCS operation with reduced excitation pulses seems to be favourable, since it provides current transient spectra obeying simple theoretical formulae. The data obtained points to a deep acceptor level in the forbidden gap of GaAs, the level being located (0.60 ± 0.03) eV below the conduction band edge. The deep centre is tentatively related to a missing anion in GaAs and it is assumed that the defect is created in the course of anodization. DLTC-Spektroskopie wird zur Untersuchung der elektronischen Phänomene an der anodischen GaAs–Oxid-Grenzfläche eingesetzt. Es wird gefunde, daß Großsignal-Anregungsimpulse zu einem Übergangsverhalten führen, dessen Analyse fehlerhafte Ergebnisse als Folge der Nichtlinearität des Systems ergeben kann. DLTCS mit verringerten Anregungsimpulsen scheint günstiger zu sein, da sie Stromspektren liefert, die einfache theoretische Formeln befolgen. Die erhaltenen Werte weisen auf ein tiefes Akzeptorniveau in der Bandlücke von GaAs hin, das (0,60 ± 0,03) eV unterhalb der Leitungsbandkante lokalisiert ist. Das tiefe Zentrum wird vorläufig mit einem fehlenden Anion in GaAse verknüpft, wobei der Defekt während der Anodisierung erzeugt wird." @default.
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• W2009127404 date "1983-05-16" @default.
• W2009127404 modified "2023-10-17" @default.
• W2009127404 title "GaAs–Anodic Oxide Interface Examination by Deep–Level Transient Current Spectroscopy" @default.
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• W2009127404 doi "https://doi.org/10.1002/pssa.2210770136" @default.
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