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- W2009137941 abstract "Peak current densities (Ip) as high as 1.3 × 105 A/cm2 with peak-to-valley current ratios of 3.7 are reported for InAs/AlSb/GaSb/AlSb/InAs double-barrier resonant interband tunnelling diodes. The fact that 1-monolayer-thick AlSb barriers exist between the InAs and GaSb layers is essential in obtaining such a high value of Ip." @default.
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- W2009137941 date "1997-01-01" @default.
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- W2009137941 title "Resonant interband tunnelling diode with high peak current density" @default.
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- W2009137941 doi "https://doi.org/10.1049/el:19970019" @default.
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