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- W2009175380 abstract "On the engineering point of view, it is important to develop a design technology of the furnace for SiC single crystal growth. In this point of view, the recent progress of modeling on both sublimation bulk growth and hot-wall epitaxy were presented. For the sublimation, the active control of grown crystal shape by modifying crucible geometry was demonstrated. The effect of nitrogen doping on the heat transfer in a growing crystal were also investigated. For the hot-wall epitaxy, growth rate, surface morphology, and doping concentration could be predicted qualitatively with taking account of the depositing surface conditions. Chlorine-containing system was supposed to provide more stable and uniform process than the common SiH4-based system." @default.
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- W2009175380 date "2009-01-01" @default.
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- W2009175380 title "Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy" @default.
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- W2009175380 doi "https://doi.org/10.1016/j.jcrysgro.2008.09.105" @default.
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