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- W2009179400 abstract "Maskless ion beam assisted etching of GaAs and Si has been investigated. Focused Ga+ ion beam was irradiated on GaAs and Si in chlorine and xenon difluoride gas atmosphere, respectively. It was found that an optimum gas pressure existed to improve the etching rate. The etching rate showed a maximum at a bombarding angle of 60°–70°. The simulation of the etching profile was in reasonable agreement with the observed profiles. It was also found that redeposition effect is absent for ion beam assisted etching." @default.
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- W2009179400 date "1985-01-01" @default.
- W2009179400 modified "2023-09-24" @default.
- W2009179400 title "Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and Si" @default.
- W2009179400 doi "https://doi.org/10.1116/1.583293" @default.
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