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• W2009184443 abstract "The use of Ar dilution in a N plasma source has been used to achieve control of both electrical and optical properties of p-type ZnTe:N grown by molecular-beam epitaxy. Photoluminescence data are presented that show the transition from ‘‘pure’’ ZnTe emission to that indicative of heavily N-doped ZnTe. A new principal bound-exciton line associated with N impurities is observed at 2.3685 eV. An anomalous red shift in the corresponding donor-acceptor pair peak energy with increasing N concentration is observed at high N concentration and is attributed to the effects of N impurity banding. Trends in p-type conductivity confirmed the ability to control hole concentrations using Ar dilution." @default.
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• W2009184443 date "1994-11-01" @default.
• W2009184443 modified "2023-09-25" @default.
• W2009184443 title "Control of nitrogen incorporation in ZnTe:N grown by molecular‐beam epitaxy using Ar dilution in a N plasma source" @default.
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• W2009184443 doi "https://doi.org/10.1063/1.357190" @default.
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