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• W2009187174 abstract "In this work, the characteristics of the heterojunction bipolar transistors with different emitter-edge-thinning thickness were systematically investigated. A stronger downward-band-bending phenomenon was observed at the edge of emitter-edge-thinning intersection with the exposed base surface. This band bending induced the presence of a potential saddle point, which substantially increased the recombination rates and electron densities. In addition, the decision of emitter-edge-thinning thickness plays a key role in reducing surface recombination at the potential saddle point. As the emitter-edge-thinning thickness was selected between 100 and , the lowest recombination rate and electron density and highest dc current gain could be obtained. Furthermore, good agreements between the theoretical analyses and experimental results were found." @default.
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• W2009187174 date "2007-01-01" @default.
• W2009187174 modified "2023-10-18" @default.
• W2009187174 title "Influence of Emitter-Edge-Thinning Thickness on the Heterojunction Bipolar Transistor Performance" @default.
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• W2009187174 doi "https://doi.org/10.1149/1.2435628" @default.
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