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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2009207196> ?p ?o ?g. }

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• W2009207196 abstract "A review is presented of the current technical status of large-diameter GaAs crystal growth, the effects of residual impurities, stoichiometric defects and crystalline imperfections on the electrical properties of undoped semi-insulating GaAs, and the effectiveness of Group III and V isovalent, lattice-hardening dopants in yielding dislocation-free, semi-insulating GaAs crystals. Factors related to crystal growth, postgrowth annealing, and the preparation of ultraflat, damage-free GaAs wafers, which can significantly improve the performance and yields of directly implanted devices and monolithic circuits are discussed.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2009207196 date "1988-07-01" @default.
• W2009207196 modified "2023-10-18" @default.
• W2009207196 title "Status of device-qualified GaAs substrate technology for GaAs integrated circuits" @default.
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• W2009207196 doi "https://doi.org/10.1109/5.7143" @default.
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