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- W2009285903 abstract "The ErSi2 nanowires were formed on Si(110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which displayed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate at a depth of 30 mm, and the other is ErSi2 thin layers covering a wire-like Si surface. The latter is suggested to be the remaining structure after evaporation of the first type wires during high-temperature annealing. © 2009 Wiley Periodicals, Inc. Electr Eng Jpn, 167(3): 58–62, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20790" @default.
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- W2009285903 date "2009-05-01" @default.
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- W2009285903 title "Structure analysis of self-assembled ErSi2nanowires formed on Si (110) substrates" @default.
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