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• W2009355846 abstract "Chemical doping of 15 atom % Mn by Ti in 2H-BaMnO3 leads to two new polytypes, 4H- and 9R-BaMn0.85Ti0.15O3−δ, depending on the oxygen content. The 4H polytype (a = 5.71355(4) and c = 9.41230(8) Å, space group P63/mmc) was prepared in an inert atmosphere and forms face sharing dimers linked by corners based on a stacking sequence (hc)2 where h and c refer to hexagonal and cubic BaO3 layers, respectively. Selected area electron diffraction patterns and high resolution electron microscopy reveal the coexistence of two types of crystals; the majority corresponds to an ordered (hc)2-4H polytype whereas a minority fraction shows a disordered microstructure. Such differences may be associated with nonhomogeneous cationic distribution within the crystals. Oxidation in air at 1523 K for 48 days leads to conversion to the 9R polytype (a = 5.68007(1) and c = 20.98208(6) Å, space group R3̅m) with a (hhc)3 stacking sequence; Mn4+ ions are exclusively located on the central B-site (M1) of the face sharing trimers linked by corners with the oxygen vacancies located on the h-BaO3 layers leading to the formula Ba(Mn0.33)M1(Mn0.52Ti0.15)M2O2.93(1). The 9R polytype is an antiferromagnetic semiconductor with a Neel temperature of 120 K and a relative permittivity of ∼22." @default.
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• W2009355846 date "2010-06-29" @default.
• W2009355846 modified "2023-10-16" @default.
• W2009355846 title "Polytypism in the BaMn_0.85Ti_0.15O_3−δ System (0.07≤δ≤0.34). Structural, Magnetic, and Electrical Characterization of the 9R-Polymorph" @default.
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• W2009355846 doi "https://doi.org/10.1021/cm1012735" @default.
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