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• W2009376881 abstract "High resolution angle-resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with T c higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs" @default.
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• W2009376881 date "2002-05-20" @default.
• W2009376881 modified "2023-10-01" @default.
• W2009376881 title "<i>IN-SITU</i> PHOTOELECTRON SPECTROSCOPY OF MAGNETIC DOTS AND MAGNETIC SEMICONDUCTOR NANOSTRUCTURES" @default.
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• W2009376881 doi "https://doi.org/10.1142/s021797920201110x" @default.
• W2009376881 hasPublicationYear "2002" @default.
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