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- W2009406479 abstract "By combining the advantages of a catalytic metal Pd with a high-performance AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT), an interesting hydrogen sensor is fabricated and demonstrated. For the proposed device, a 50 A undoped GaAs cap layer is grown to prevent the Al0.24Ga0.76As Schottky layer from oxidizing and to reduce the Fermi level pinning effect. Experimentally, a high sensitivity SJ value of 275.8 µA/mmppm H2/air can be obtained at a hydrogen concentration of 14 ppm H2/air. Even at a very low hydrogen concentration (≤4.3 ppm H2/air) at 30°C, a significant current variation can be observed. In addition, a fast transient response is found. The adsorption time constant τa becomes only 2 s as the operating temperature is elevated to 160°C. Therefore, the proposed device reveals the promise for high-performance hydrogen sensor applications." @default.
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- W2009406479 date "2006-02-08" @default.
- W2009406479 modified "2023-10-18" @default.
- W2009406479 title "AlGaAs/InGaAs/GaAs Transistor-Based Hydrogen Sensing Device Grown by Metal Organic Chemical Vapor Deposition" @default.
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- W2009406479 doi "https://doi.org/10.1143/jjap.45.680" @default.
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