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• W2009433620 abstract "CNx layers were grown on polished Si(100) wafers by the ion beam assisted deposition (IBAD) technique at temperatures varying between 200 and 600 °C. A Kaufman type ion source fed by Ar and N2 was applied together with an e-beam heated evaporation source of graphite for the deposition of the CNx layers. The composition and chemical bonding state of elements were studied by X-ray photoelectron spectroscopy. The N-content varied in the range of 8–16 at.% and showed a decrease with the increase of deposition temperature. The broad C1s and N1s XPS lines manifested several bonding states. The relative intensities of the component peaks varied with the preparation conditions. The two main components of the N1s peak situated at BE=398.2 eV and 400.6 eV were assigned to sp2 (CNC) and sp3 (NC) type bonding states, respectively. The thermal stability of the sp3 states was higher than that of the sp2 ones, because the intensity of the 398.2 eV component decreased preferentially with increasing deposition temperature. A post-deposition treatment with low energy N2+ ion beam resulted in a significant increase in the overall N-content on the surface, with a preferential increase in the concentration of sp2 type nitrogen." @default.
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• W2009433620 date "2002-03-01" @default.
• W2009433620 modified "2023-10-06" @default.
• W2009433620 title "XPS characterization of the composition and bonding states of elements in CN layers prepared by ion beam assisted deposition" @default.
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• W2009433620 doi "https://doi.org/10.1016/s0925-9635(01)00716-6" @default.
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