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• W2009456075 abstract "Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III–Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO2 through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO2 as the first step which paves the way for realizing active photonic devices on Si/SiO2 waveguides, e.g. an MECSL." @default.
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• W2009456075 date "2012-10-01" @default.
• W2009456075 modified "2023-09-30" @default.
• W2009456075 title "III–Vs on Si for photonic applications—A monolithic approach" @default.
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• W2009456075 doi "https://doi.org/10.1016/j.mseb.2011.12.006" @default.
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