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• W2009479112 abstract "We report bandlike transport in solution-deposited, CdSe QD thin-films with room temperature field-effect mobilities for electrons of 27 cm(2)/(V s). A concomitant shift and broadening in the QD solid optical absorption compared to that of dispersed samples is consistent with electron delocalization and measured electron mobilities. Annealing indium contacts allows for thermal diffusion and doping of the QD thin-films, shifting the Fermi energy, filling traps, and providing access to the bands. Temperature-dependent measurements show bandlike transport to 220 K on a SiO(2) gate insulator that is extended to 140 K by reducing the interface trap density using an Al(2)O(3)/SiO(2) gate insulator. The use of compact ligands and doping provides a pathway to high performance, solution-deposited QD electronics and optoelectronics." @default.
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• W2009479112 date "2012-04-24" @default.
• W2009479112 modified "2023-10-18" @default.
• W2009479112 title "Bandlike Transport in Strongly Coupled and Doped Quantum Dot Solids: A Route to High-Performance Thin-Film Electronics" @default.
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• W2009479112 doi "https://doi.org/10.1021/nl301104z" @default.
• W2009479112 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/22509936" @default.
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