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• W2009512945 abstract "A new technique to make amorphous (a) materials is described and successfully applied to C, Si and Re. The basic scheme consists in depositing a random solid solution or an amorphous XAg mixture where X is totally inert to I. The Ag atoms are then removed by exposing the XAg film to I, leaving an amorphous X film with a density appreciably lower than bulk. The technique was tested on CAg films since the resulting a-C films could be compapared with a-C films deposited by conventional means. X-ray fluorescence and neutron activation analysis established that the Ag extraction by I in a-C films several thousand Å thick is extremely good, with Ag residues ranging from 10−4 to 10−2 of the original Ag content. The resistivity at 300 K of these a-C films was as high as 107 Ω cm, 5 orders of magnitude above that of evaporated or sputtered a-C films. It is likely that this effect is due to the removal of defect states such as dangling bonds either by surface reconstruction or by the trapped I similarly to a-C:H films. The most rewarding application of this technique was the preparation of essentially pure (except for a few at% I) a-Re films, since Re films sputtered at 77 K are crystalline. The properties of these a-Re films fall in three classes depending on the original Re content of the starting ReAg film. At 90 at% Re, the a-Re films are superconducting at ⋍ 6 K; the resistivity is about 2 × 10−4 Ω cm at 300 K and has a small negative temperature coefficient [α = (dϱ/ϱ)dT = −3 × 10−4 K−1] typical of amorphous metals. For Re concentrations between 43.5 and 59 at% the density of the a-Re films is about half that of bulk. The resistivity of these films displays two different types of temperature dependence: at intermediate resistivities [ϱ(300 K) ⋍ 2 × 10−2 Ω cm] α = −3 × 10−3K−1 while for high room temperature resistivities (10−1to 104 Ω cm) ϱ ∼- exp T−12. In other words, above 60 at% Re the a-Re films displays an essentially metallic conductivity while below 60 at% Re they are characterized by a semiconducting conductivity." @default.
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• W2009512945 date "1983-01-01" @default.
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• W2009512945 title "Amorphous X films (X = C, Si, OR Re) prepared by extracting Ag with I from AgX films" @default.
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• W2009512945 doi "https://doi.org/10.1016/0022-3093(83)90079-0" @default.
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