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• W2009551489 abstract "The oxidation of GaN at room temperature was investigated using x-ray photoemission spectroscopy. The onset of oxidation is observed at 105 Langmuir (L=10−6 Torr s) of oxygen exposure. This is seen both in changes in the percent composition of oxygen and in shifts in the core spectrum of Gallium. The oxidation saturates at an exposure of 108 L. Detailed core level analysis shows that at this exposure most of the surface Ga atoms have been oxidized. The results indicate that the oxidation of GaN is a kinetically limited process restricted to the surface and the underlying bulk is not strongly perturbed. This is in sharp contrast with GaAs where oxidation begins at the same level of exposure and then continues for all further exposures as subsurface layers are oxidized." @default.
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• W2009551489 date "1999-10-25" @default.
• W2009551489 modified "2023-09-26" @default.
• W2009551489 title "Oxidation study of GaN using x-ray photoemission spectroscopy" @default.
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• W2009551489 doi "https://doi.org/10.1063/1.125091" @default.
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