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• W2009581736 abstract "Cleaning of GaN by argon sputtering and subsequent annealing introduces metallic gallium on the GaN surface. Once formed, this metallic gallium can be difficult to remove. it has a strong influence ..." @default.
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• W2009581736 date "2009-09-01" @default.
• W2009581736 modified "2023-09-23" @default.
• W2009581736 title "Investigation on the role of indium in the removal of metallic gallium from soft and hard sputtered GaN (0001) surfaces" @default.
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• W2009581736 doi "https://doi.org/10.1016/j.tsf.2009.05.023" @default.
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