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• W2009602389 abstract "A series of subpicosecond time-resolved reflectivity measurements on n-type GaAs(100) interfaces at photoexcitation densities of 1018 cm−3 is reported. It is observed that the temporal dependence of the reflectivity signal within the first several picoseconds following photoexcitation is highly dependent upon interface preparation. The surface of the GaAs was prepared in several ways: by the growth of a thermal oxide overlayer, a photochemically passivated oxide overlayer, and an epitaxial ZnSe overlayer." @default.
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• W2009602389 date "1991-09-16" @default.
• W2009602389 modified "2023-10-17" @default.
• W2009602389 title "Time-resolved reflectivity studies of the GaAs(100)/oxide and GaAs(100)/ZnSe interface" @default.
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• W2009602389 doi "https://doi.org/10.1063/1.105292" @default.
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