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• W2009603172 abstract "Abstract CdIn 2 Te 4 epitaxial films were grown on p -InSb(1 1 1) orientation substrates by temperature gradient vapor transport deposition via a two-step method. Double crystal X-ray diffraction was used to evaluate the crystallization and the crystal quality of the CdIn 2 Te 4 films. Raman spectroscopy showed several optical phonon modes of the CdIn 2 Te 4 thin films. The stoichiometry of the CdIn 2 Te 4 films was investigated by Auger electron spectroscopy. The results showed that high quality epitaxial films of CdIn 2 Te 4 could be grown on p -InSb(1 1 1) by a simple technique." @default.
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• W2009603172 date "1992-12-01" @default.
• W2009603172 modified "2023-09-24" @default.
• W2009603172 title "Structural and optical properties of CdIn2Te4 films on p-InSb(1 1 1) grown by temperature gradient vapor transport deposition" @default.
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• W2009603172 doi "https://doi.org/10.1016/0038-1098(92)90702-b" @default.
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