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• W2009623003 abstract "La-doped ZrO2 thin films grown by O3-based atomic layer deposition directly on Ge(100) exhibit a dielectric constant of 29. Upon annealing in N2 at 400 °C, a high κ value &gt;40 is extracted for film thickness below 15 nm. Compositional depth profiling allows to correlate this observation with a remarkable Ge interdiffusion from the substrate which is consistent with the stabilization of the tetragonal ZrO2 phase. Ge interaction with the oxide stack and the formation of a germanate-like interfacial region, which acts as an electrical passivation for the Ge surface, are also investigated." @default.
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• W2009623003 date "2009-09-21" @default.
• W2009623003 modified "2023-10-04" @default.
• W2009623003 title "Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)" @default.
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• W2009623003 doi "https://doi.org/10.1063/1.3227669" @default.
• W2009623003 hasPublicationYear "2009" @default.
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