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• W2009642785 abstract "In this paper we report on the application of in-situ CCVD grown bilayer graphene field effect transistors (BiLGFETs) as memory devices, grown in a Silicon-CMOS compatible fabrication process. By means of catalytic chemical vapor deposition (CCVD) the BiLGFETs are realized directly on oxidized silicon substrate without transfer. These BiLGFETs possess unipolar p-type device characteristics with a high on/off-current ratio between 1×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> and 1×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> at room temperature [1, 2]. The hysteresis of BiLGFETs depends on the cycling range of the applied backgate voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BG</sub> while the sub-threshold slope is uniform for varied temperatures and varied cycling ranges of the backgate voltage [3]. Based on the observed properties of BiLGFETs it is possible to use BiLGFETS as memory devices." @default.
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• W2009642785 date "2013-03-01" @default.
• W2009642785 modified "2023-09-30" @default.
• W2009642785 title "Transfer-free grown bilayer graphene memory devices" @default.
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• W2009642785 doi "https://doi.org/10.1109/dtis.2013.6527769" @default.
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