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- W2009652977 abstract "Changing the crystal orientation of Ni films by the effect of reactive gas is attempted. It is known that (111)-oriented Ni film is usually obtained by sputtering in pure Ar gas. However, we report that almost single-oriented (100) Ni films are prepared by rf sputtering when a small amount of N 2 (1% < N 2 flow ratio < 7%) is mixed with Ar gas. By electrical resistivity measurement and Auger electron spectroscopy (AES), the presence of nitrogen in the (100) Ni films is not observed. Consequently, it is found that nitrogen influences the crystal orientation at the growing film surface but is not incorporated into the films. This enables us to prepare Ni films with either (111) orientation or (100) orientation by sputtering in a controlled manner without a postannealing process." @default.
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- W2009652977 date "2004-07-01" @default.
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- W2009652977 title "Crystal Orientation Change of Ni Films by Sputtering in Ar-N<sub>2</sub> Mixed Gases" @default.
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- W2009652977 doi "https://doi.org/10.1143/jjap.43.4361" @default.
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