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• W2009673375 abstract "Epitaxial layers of InAs1−xSbx (0.0⩽x⩽1.0) have been prepared by MOCVD in a vertical, atmospheric pressure quartz reaction chamber. Trimethylindium (TMI), trimethylantimony (TMSb), and arsine in H2 were used as the source materials. The best surface morphologies and sharpest X-ray patterns were obtained for a growth temperature of 475°C, a TMI/(TMSb+AsH3) molar ratio equal to 1.00, and a growth rate of less than 1.0μ/h. The growth efficiencies of InSb and InAs1−xSbx at 475°C are 3500 and 2000 μ/mol In, respectively. The growth rates were found to be thermally activated. The solid composition of the ternary can be predicted by a thermodynamic model from the starting partial pressures of the reactants. Strained-layer superlattices (SLS's) of the type InAs1−xSbx have been prepared by a purge/growth technique. The SLS's were characterized by optical microscopy, X-ray diffraction and transmission electron microscopy. The presence of residual tension between the superlattice and the buffer layer or the buffer layer and the substrate can result in the formation of microcracks and misfit dislocations. Residual defects on the substrate also result in the formation of dislocations. These dislocations can be minimized by growing the superlattices on top of a step graded buffer layer which eliminates the microcracks." @default.
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• W2009673375 date "1986-09-01" @default.
• W2009673375 modified "2023-09-26" @default.
• W2009673375 title "The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVD" @default.
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• W2009673375 doi "https://doi.org/10.1016/0022-0248(86)90329-5" @default.
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