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- W2009683453 abstract "Very thin SiO 2 films, 3–10 nm in thickness, have been formed on silicon by rapid thermal processing (RTP), and their dielectric reliability has been investigated in comparison with furnace-grown oxides. The SiO 2 films grown by RTP are superior to furnace oxides on both the dielectric breakdown and the Si-SiO 2 interface characteristics. On the RTP SiO 2 films, quantum oscillation in MOS tunneling is clearly observed at 300 K. The Si-SiO 2 interface roughness is estimated from the Fowler-Nordheim plot. These results indicate that the Si-SiO 2 structure is ordered within one monolayer." @default.
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- W2009683453 date "1988-11-01" @default.
- W2009683453 modified "2023-10-14" @default.
- W2009683453 title "The Dielectric Reliability of Very Thin SiO2Films Grown by Rapid Thermal Processing" @default.
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- W2009683453 doi "https://doi.org/10.1143/jjap.27.l2164" @default.
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