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- W2009707913 abstract "Abstract The axial thermal profiles of silicon crystals during the Czochralski crystal growth process were measured experimentally by using an eddy current technology. The intrinsic conductivity changes in the crystal resulting from cooling were measured in terms of the eddy current amplitude and phase responses, and the axial thermal profiles of the growing crystal were subsequently derived from the results. The experimental setup consisted of a resistance-heated Czochralski puller with a 203 mm (8 inch) hot-zone, a multifrequency encircling eddy current sensor and a commercially available eddy current system interfaced with an IBM PC. The silicon crystals, 70 mm in diameter and up to 406 mm (16 inches) in length, were grown from 5 kg melts. The eddy current sensor was initially positioned 100 mm above the melt, and then the measurements were made as it was lowered to 25 mm above the melt at a constant speed of 25 mm/min. The experimental results indicate that the axial thermal profile in the region is nearly linear and quite transient during the initial phase of body growth. As the crystal gets longer, the increasing heat loss by radiation from the crystal surface causes the overall profile to shift downward. When the crystal reaches 200–250 mm in length, a steady state condition is achieved, and the overall axial thermal profile stays nearly invariant for the remainder of the growth. The steady state axial thermal gradient in the region is estimated to be about 4–6°C/mm." @default.
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- W2009707913 date "1988-04-01" @default.
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- W2009707913 title "Eddy current measurement of crystal axial thermal profiles during Czochralski silicon crystal growth" @default.
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- W2009707913 doi "https://doi.org/10.1016/s0022-0248(98)90006-9" @default.
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