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- W2009733089 abstract "An isochronal annealing in the 100-1200 oC temperature range was carried out on 116 and 400 keV electron irradiated Al-doped 6H-SiC epitaxial layers. Electrical characterization of the epilayers, performed by Fourier-Transform Deep Level Transient Spectroscopy, revealed the presence of six levels in the band gap, in the 0.1-1.6 eV energy range. Their nature is discussed in the light of previous experimental and theoretical works found in the literature." @default.
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- W2009733089 date "2011-03-01" @default.
- W2009733089 modified "2023-10-16" @default.
- W2009733089 title "Electrically Active Defects in Electron Irradiated P-Type 6H-SiC" @default.
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