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• W2009753522 abstract "We studied the thermally induced amorphous-to-crystalline transformation in RF sputtered Te-Se-I films with an approximately constant Te: Se ratio of 3:4 and with different halogen concentrations in the range 0–20 at % I. Crystallization usually occured via the formation and growth of cylindrites (two-dimensional, radially aligned polycrystalline aggregates) which exhibited a branched fibrillar morphology. The major effects of the halogen on the transformation were as follows: (i) The halogen strongly stabilized the amorphous phase. Crystallization took place when there was substantial superheating at temperatures above 80°C after the halogen was depleted. (ii) The halogen restricted the cylindrite formation to a thin surface layer and dictated the details of the branched morphology. (iii) In the halogenated films all the cylindrites appeared suddenly rather than nucleating at a constant rate and their density was reduced by a factor of 100." @default.
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• W2009753522 date "1994-05-01" @default.
• W2009753522 modified "2023-09-26" @default.
• W2009753522 title "Crystallization study of glassy Te-Se-I thin films" @default.
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• W2009753522 doi "https://doi.org/10.1016/0022-0248(94)90036-1" @default.
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