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- W2009792261 abstract "In short-channel silicon-on-insulator metal–oxide–semiconductor field-effect transistors, the condition for full depletion involves not only the body thickness and doping but also the channel length. The proximity of source and drain junctions reduces the apparent doping seen from the gate, which makes full depletion easier. Therefore, a transistor designed as partially depleted can behave as fully depleted. A simple analytical model for the length-doping transformation is proposed and validated by numerical simulations." @default.
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- W2009792261 date "2004-02-10" @default.
- W2009792261 modified "2023-09-25" @default.
- W2009792261 title "Transition from partial to full depletion in silicon-on-insulator transistors: Impact of channel length" @default.
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- W2009792261 doi "https://doi.org/10.1063/1.1646461" @default.
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